Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers

• Thomas H. Loeber,
• Dirk Hoffmann and
• Henning Fouckhardt

Beilstein J. Nanotechnol. 2011, 2, 333–338, doi:10.3762/bjnano.2.39

• QD layers, an electrically pumped efficient QD laser was realized with an emission wavelength of λ ≈ 0.900 µm at a temperature of 84 K. Keywords: V/III flux ratio; GaSb quantum dots; growth temperature; semiconductor laser; Stranski–Krastanov growth; Introduction GaSb quantum dots (QDs) grown on